Paper
29 March 2019 Line roughness improvements on EUV 36nm pitch pattern by plasma treatment method
Toshiharu Wada, Chia-Yun Hsieh, Akiteru Ko, Peter Biolsi
Author Affiliations +
Abstract
TEL’s patented DCS function and conventional plasma treatment were applied on EUV PR to examine the effect of ion/radical loading and surface modification. The DCS function accelerates plasma selective deposition particularly on the top of EUV PR at 36nm pitch. The increment of EUV PR height secures etching budget and provides longer plasmas smoothing period. In addition, line roughness was also smoothed during area plasma selective deposition due to loading effect. In this study, our plasma treatment was able to improve PR roughness by 30% comparing to as-exposed litho and the performance was kept to the next oxide layer. Furthermore, an extra 13.7nm of PR was gained which enlarged the process windows of etching selectivity and plasma smoothing effect.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toshiharu Wada, Chia-Yun Hsieh, Akiteru Ko, and Peter Biolsi "Line roughness improvements on EUV 36nm pitch pattern by plasma treatment method", Proc. SPIE 10963, Advanced Etch Technology for Nanopatterning VIII, 109630I (29 March 2019); https://doi.org/10.1117/12.2514764
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Extreme ultraviolet

Plasma treatment

Line edge roughness

Line width roughness

Photoresist materials

193nm lithography

Immersion lithography

RELATED CONTENT


Back to Top