Paper
28 June 2019 Photonic properties of periodic arrays of nanoscale Si fins
Andrzej Gawlik, Janusz Bogdanowicz, Andreas Schulze, Jan Misiewicz, Wilfried Vandervorst
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Abstract
Understanding the interactions of light with periodic arrays of Si fins is of the utmost importance for nanoelectronics, where laser light is used for the fabrication and metrology of fin field effect transistors (finFETs). However, due to their nanoscale dimensions and periodic arrangement, these structures exhibit complex photonic properties. In this work, we explain theoretically how the reflectance of semi-infinite periodic arrays of Si fins embedded in SiO2 varies with the fin pitch (i.e. spatial periodicity) and fin width. The results are corroborated with band structure calculations, showing that the spectra of both polarizations, parallel (TE) and perpendicular (TM) to the fin sidewalls, can be understood based on the excitation of one waveguide mode. First, we demonstrate that increasing the pitch decreases the reflectance from the arrays, for both polarizations. Moreover, TE spectra resemble that of bulk Si and are much higher as compared to TM, which are similar to the bulk SiO2 spectrum. The difference is attributed to the fact that TE mode is mostly confined inside the fin, whereas TM is spread in the SiO2. Subsequently, we show that the reflectance from the arrays increases as a function of the fin width. TE reflectances are again mostly sensitive towards Si dispersion and higher than TM counterparts. Interestingly, for TM illumination a transition from the SiO2- to Si-like spectra is observed for the fins of increasing width. The transition is caused by the change in the fraction of the electric field propagating inside the fin. The developed insight will facilitate design, fabrication and metrology of optoelectronic, photovoltaic and nanoelectronic devices.
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Andrzej Gawlik, Janusz Bogdanowicz, Andreas Schulze, Jan Misiewicz, and Wilfried Vandervorst "Photonic properties of periodic arrays of nanoscale Si fins", Proc. SPIE 10927, Photonic and Phononic Properties of Engineered Nanostructures IX, 1092727 (28 June 2019); https://doi.org/10.1117/12.2510070
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KEYWORDS
Silicon

Reflectivity

Polarization

Silica

Wave propagation

Fin field effect transistors

Metrology

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