Enhancement in optical properties with suppression of defect states by UV-ozone processing in RF sputtered Zn(1-x)MgxO (x=15%) thin film

Md Jawaid Alam; Punam Murkute; Hemant Ghadi; Sushama Sushama; Subhananda Chakrabarti

doi:10.1117/12.2509673

1 March 2019 Enhancement in optical properties with suppression of defect states by UV-ozone processing in RF sputtered Zn_1-xMg_xO (x=15%) thin film

Md Jawaid Alam, Punam Murkute, Hemant Ghadi, Sushama Sushama, Subhananda Chakrabarti

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Proceedings Volume 10919, Oxide-based Materials and Devices X; 109192M (2019) https://doi.org/10.1117/12.2509673
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

Owing to wide band gap and high exciton energy of ZnMgO can be used in UV based applications like laser diodes, LED and as transparent conducting oxide in solar cells. In present work, we study the effect of UVOzone (UVO) annealing on RF sputtered ZnMgO thin films. Here, we have deposited ZnMgO thin films on Si <100< substrate followed by UVO annealing treatment for 30 min. The as-deposited and UVO treated films were characterized using various optical, structural and elemental characterization techniques and compared with as-deposited ZnMgO thin films. Room Temperature PL results for as-deposited film exhibited dominant defects band emission (DBE) peak intensities in visible region with negligible emission from near band emission (NBE) peak. An increase in NBE emission peak at around ~ 360 nm (3.44eV) with minimal defect states emission was observed for UVO treated sample. NBE to DBE Intensity ratio (I_NBE/I_Defect) of 1.7 was observed from sample B which was almost zero for as-grown film. High resolution X-ray diffraction (HRXRD) results exhibited (002), (220) and (311) crystal orientation peak in as-deposited sample. Post UVO (002) peak shifted to higher angle side. X-ray photoelectron spectroscopy results of Zn-2p and O-1s shows increase in metal-oxide bonds and decrease in oxygen vacancies. Atomic force microscopy results show increase in film roughness from 2.3 to 2.46 nm for as-deposited and UVO treated sample respectively. Authors would like to acknowledge IITBNF for all its facilities at IIT Bombay.

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Md Jawaid Alam, Punam Murkute, Hemant Ghadi, Sushama Sushama, and Subhananda Chakrabarti "Enhancement in optical properties with suppression of defect states by UV-ozone processing in RF sputtered Zn_1-xMg_xO (x=15%) thin film", Proc. SPIE 10919, Oxide-based Materials and Devices X, 109192M (1 March 2019); https://doi.org/10.1117/12.2509673

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KEYWORDS

Annealing

Oxygen

Thin films

Zinc oxide

Atomic force microscopy

Ultraviolet radiation

Magnesium

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