0.25 Âµm Trench Etching By ECR Plasma

H. Fujiwara; K. Fujimoto; H. Araki; Y. Tobinaga

doi:10.1117/12.968543

1 August 1989 0.25 µm Trench Etching By ECR Plasma

H. Fujiwara, K. Fujimoto, H. Araki, Y. Tobinaga

Proceedings Volume 1089, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII; (1989) https://doi.org/10.1117/12.968543
Event: 1989 Santa Clara Symposium on Microlithography, 1989, San Jose, CA, United States

Abstract

Fine pattern was delineated by an electron beam (E-beam) exposure system and an electron cyclotron resonance (EcR) plasma etcher. First, "micro-loading effect", which is apt to reduce an etching rate in a much smaller pattern, was investigated by photoresist etching with 0₂ gas, and the relationship between the above effect and the 02 pressure was obtained. Secondly, a very fine Si trench structure was etched with mixing etchant gases of C1₂ and 0₂. A Si trench structure with 0.25 μm width and 1.5 μm depth was achieved by a novel etching technology that both the amount of 0₂ and radio frequence (RF) bias power were changed during etching.

Citation Download Citation

H. Fujiwara, K. Fujimoto, H. Araki, and Y. Tobinaga "0.25 µm Trench Etching By ECR Plasma", Proc. SPIE 1089, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII, (1 August 1989); https://doi.org/10.1117/12.968543

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