Annealing effect on the photodiode properties of Be implanted InSb

Gang Chen; Peng Wei; Guansheng Yao; Yubo Wang; Yanqiu Lv

doi:10.1117/12.2505472

12 December 2018 Annealing effect on the photodiode properties of Be implanted InSb

Gang Chen, Peng Wei, Guansheng Yao, Yubo Wang, Yanqiu Lv

Proceedings Volume 10846, Optical Sensing and Imaging Technologies and Applications; 108462H (2018) https://doi.org/10.1117/12.2505472
Event: International Symposium on Optoelectronic Technology and Application 2018, 2018, Beijing, China

Abstract

In this work, Be ions were used for p-type doping by implantation because of its light mass and consequently lower damage introduction rate. Photodiode properties of implanted InSb with both conventional annealing and rapid thermal annealing were also presented. The p-on-n structure samples were fabricated by Be ions bombarding with the doses of 2×10¹⁴ cm^-2 and 5×10¹⁴ cm^-2 at room temperature. The implanting energy was chosen at 100KeV, 120KeV and 140KeV, respectively. Then SIMS measurements were taken to confirm the depth and doping concentration distribution. The rapid thermal annealing and conventional annealing were employed to make the comparison. The InSb photodiodes were fabricated using the process including mesa etching, passivation, and metallization. The current-voltage curves with both annealing methods were obtained at 77K, showing that the diodes with annealing condition of 350 .60 minutes has the highest zero-bias resistance. The diodes by conventional furnace annealing have better performance than that of rapid thermal annealing.

Citation Download Citation

Gang Chen, Peng Wei, Guansheng Yao, Yubo Wang, and Yanqiu Lv "Annealing effect on the photodiode properties of Be implanted InSb", Proc. SPIE 10846, Optical Sensing and Imaging Technologies and Applications, 108462H (12 December 2018); https://doi.org/10.1117/12.2505472

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