Paper
8 February 2019 TFT with ultra-low temperature poly-silicon technology for flexible liquid crystal display
Xuexin Lan, Yanmei Li, Lihua Zheng, Guozhao Chen, Junyi Li, Xuhui Peng
Author Affiliations +
Proceedings Volume 10843, 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing and Imaging; 108431R (2019) https://doi.org/10.1117/12.2512314
Event: Ninth International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT2018), 2018, Chengdu, China
Abstract
Low temperature poly silicon technology with a temperature of 400℃ was developed and discussed for the application of flexible liquid crystal display (LCD). By optimizing the doping and activation processes, the TFT device with a mobility of 80 cm2/V•s was fabricated successfully. Also we studied the mechanism of doping and activation at 400℃, and found out that the upper limit of implanted dosage and electrical activation rate were 2 × 1014 ions/cm2 and 20%, respectively.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xuexin Lan, Yanmei Li, Lihua Zheng, Guozhao Chen, Junyi Li, and Xuhui Peng "TFT with ultra-low temperature poly-silicon technology for flexible liquid crystal display", Proc. SPIE 10843, 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing and Imaging, 108431R (8 February 2019); https://doi.org/10.1117/12.2512314
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KEYWORDS
Doping

Silicon

LCDs

Ions

Glasses

Amorphous silicon

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