Paper
8 February 2019 8×8 format InGaAs/InP avalanche photodiode plane array for 3D imaging laser radar system
Author Affiliations +
Proceedings Volume 10843, 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing and Imaging; 1084304 (2019) https://doi.org/10.1117/12.2504875
Event: Ninth International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT2018), 2018, Chengdu, China
Abstract
This paper reports a planar structure InGaAs/InP avalanche photodetector focal plane arrays. Their material structure use separate absorption, grading, charge and multiplication layer. The pixel pitch of 8×8 format detectors is 250 μm. The breakdown voltage (VBD) is typically in the range of 65 to 70 V for most of the devices on the same wafer. The typical dark current at 90% of VBD is 3 nA, dark currents as low as 0.5 nA at 90% of VBD have also been observed for some diodes, corresponding to a dark current density of 1 × 10-5 A/cm2. The photocurrent starts to increase at the "punch-through" voltage Vp of 43 V. The responsivity at 1.55 μm is 0.91 A/W at unity gain and the multiplication layer is estimated to be 1.2 μm. Each device on the same wafer has excellent characteristics and high uniformity through measurement, laying a solid foundation for 3D imaging laser radar systems.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shuai Wang, Qin Han, Lili Hou, Han Ye, and Ziqing Lu "8×8 format InGaAs/InP avalanche photodiode plane array for 3D imaging laser radar system", Proc. SPIE 10843, 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing and Imaging, 1084304 (8 February 2019); https://doi.org/10.1117/12.2504875
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KEYWORDS
Diffusion

Staring arrays

Imaging systems

Avalanche photodiodes

LIDAR

Laser systems engineering

Zinc

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