Paper
5 October 2018 A 110-170 GHz transceiver in 130 nm SiGe BiCMOS technology for FMCW applications
Yu Yan, Tomas Bryllert, Vessen Vassilev, Sten E. Gunnarsson, Herbert Zirath
Author Affiliations +
Abstract
A 110-170 GHz transceiver is designed and fabricated in a 130 nm SiGe BiCMOS technology. The transceiver operates as an amplifier for transmitting and simultaneously as a fundamental mixer for receiving. In a measured frequency range of 120-160 GHz, a typical output power of 0 dBm is obtained with an input power of +3 dBm. As a fundamental mixer, a conversion gain of -9 dB is obtained at 130 GHz LO, and a noise figure of 19 dB is achieved. The transceiver is successfully demonstrated as a FMCW radar front-end for distance measurement. With a chirp rate of 1.6×1012 Hz/s and a bandwidth of 14.4 GHz, a range resolution of 2.8 cm is demonstrated, and transmission test is shown on different objects.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yu Yan, Tomas Bryllert, Vessen Vassilev, Sten E. Gunnarsson, and Herbert Zirath "A 110-170 GHz transceiver in 130 nm SiGe BiCMOS technology for FMCW applications", Proc. SPIE 10800, Millimetre Wave and Terahertz Sensors and Technology XI, 108000I (5 October 2018); https://doi.org/10.1117/12.2318791
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Transceivers

Radar

Amplifiers

Signal attenuation

Transformers

Transistors

Distance measurement

RELATED CONTENT


Back to Top