High-operating temperatures InAsSb/AlSb heterostructure infrared detectors

M. Kopytko; E. Gomółka; P. Martyniuk; P. Madejczyk; J. Rutkowski; A. Rogalski

doi:10.1117/12.2320539

18 September 2018 High-operating temperatures InAsSb/AlSb heterostructure infrared detectors

M. Kopytko, E. Gomółka, P. Martyniuk, P. Madejczyk, J. Rutkowski, A. Rogalski

Proceedings Volume 10766, Infrared Sensors, Devices, and Applications VIII; 1076607 (2018) https://doi.org/10.1117/12.2320539
Event: SPIE Optical Engineering + Applications, 2018, San Diego, California, United States

Abstract

An InAsSb/AlSb heterostructure photovoltaic detector structures were grown on a (100) semi-insulating GaAs substrates by a molecular beam epitaxy. We compare the performance of two detectors with a different type of absorbing layers, denoted p⁺B_ppB_pn⁺ and p⁺B_pnn⁺. InAs_0.81Sb_0.19 absorption layers allow for a operation up to 5.3 μm cut-off wavelengths at 230 K. p⁺B_pnn⁺ detector (n-type absorber) exhibits diffusion-limited dark currents above 200 K. AlSb barrier provides a low values of dark currents and allows a suppression of surface leakage current. With a value of 0.13 A/cm² at 230 K, the current is less than an order of magnitude larger than those determined by the "Rule 07" for HgCdTe detectors. Dark currents of p⁺B_ppB_pN⁺ detector (p-type absorber) are much higher due to a contribution of Shockley-Read-Hall mechanisms. On the other hand, device with a p-type absorber shows highest values of current responsivity, up to 2.5 A/W, point out that there is a trade-off between dark current performance and quantum efficiency.

Conference Presentation

Citation Download Citation

M. Kopytko, E. Gomółka, P. Martyniuk, P. Madejczyk, J. Rutkowski, and A. Rogalski "High-operating temperatures InAsSb/AlSb heterostructure infrared detectors", Proc. SPIE 10766, Infrared Sensors, Devices, and Applications VIII, 1076607 (18 September 2018); https://doi.org/10.1117/12.2320539

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