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Two-dimensional layered materials, such as MoS2, have attracted a lot of research attention after the discovery of graphene. They are often used in optoelectronic devices in the form of a few layers, which are stacked through the weak interlayer van der Walls interactions. The orientations of different layers and their stacking configurations strongly affect the band structure and thus govern the electronic properties of the device. Shear mode and breathing mode vibrations of these layers that arise due to the in-plane and the out of plane vibrations of entire layers can characterize stacking configurations. Since these modes originate from the weak interlayer interactions, they have very low vibrational energies and appear in the extreme low-frequency range in Raman spectrum. Here in this research, we try to identify differences in stacking configurations of MoS2 layers using ultra-low-frequency Raman spectroscopy for small dimensions of the sample
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