A New Device Architecture Suitable For High-Resolution And High-Performance Image Sensors

Jerry Hynecek

doi:10.1117/12.952514

23 May 1989 A New Device Architecture Suitable For High-Resolution And High-Performance Image Sensors

Jerry Hynecek

Proceedings Volume 1071, Optical Sensors and Electronic Photography; (1989) https://doi.org/10.1117/12.952514
Event: OE/LASE '89, 1989, Los Angeles, CA, United States

Abstract

A new device architecture was developed for building high-performance and high-resolution image sensors suitable for consumer TV camera applications. The sensor elements employed in this architecture are junction field-effect transistors that are organized into an array with their gates floating and capacitively coupled to common horizontal address lines. The photogenerated signal is sampled one line at a time, processed to remove the element-to-element nonuniformities, and stored in a buffer for subsequent readout. The described concept, which includes an intrinsic exposure control, is demonstrated on a test image sensor that has an 8-mm sensing area diagonal and 580(H) x 488(V) picture sensing elements. The key performance parameters achieved in this design, in addition to a high packing density of sensing elements with a unique hexagonal shape, include high signal uniformity, low dark current, good light sensitivity, high blooming overload protection, and no image smear.

Citation Download Citation

Jerry Hynecek "A New Device Architecture Suitable For High-Resolution And High-Performance Image Sensors", Proc. SPIE 1071, Optical Sensors and Electronic Photography, (23 May 1989); https://doi.org/10.1117/12.952514

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