Oxide-bonded molecular-beam epitaxial backside passivation process for large-format CCDs

K. K. Ryu; C. W. Leitz; H. R. Clark; X. Chen; M. J. Cooper; M. Zhu; P. B. Welander; R. D. Lambert; V. Bolkhovsky; D.-R. W. Yost; B. E. Burke; J. A. Gregory; V. Suntharalingam

doi:10.1117/12.2311512

6 July 2018 Oxide-bonded molecular-beam epitaxial backside passivation process for large-format CCDs

K. K. Ryu, C. W. Leitz, H. R. Clark, X. Chen, M. J. Cooper, M. Zhu, P. B. Welander, R. D. Lambert, V. Bolkhovsky, D.-R. W. Yost, B. E. Burke, J. A. Gregory, V. Suntharalingam

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Proceedings Volume 10699, Space Telescopes and Instrumentation 2018: Ultraviolet to Gamma Ray; 106993P (2018) https://doi.org/10.1117/12.2311512
Event: SPIE Astronomical Telescopes + Instrumentation, 2018, Austin, Texas, United States

Abstract

We describe recent advances in backside passivation of large-format charge-coupled devices (CCDs) fabricated on 200- mm diameter wafers. These CCDs utilize direct oxide bonding and molecular-beam epitaxial (MBE) growth to enable high quantum efficiency in the ultraviolet (UV) and soft X-ray bands. In particular, the development of low-temperature MBE growth techniques and oxide bonding processes, which can withstand MBE processing, are described. Several highperformance large-format CCD designs were successfully back-illuminated using the presented process and excellent quantum efficiency (QE) and dark current are measured on these devices. Reflection-limited QE is measured from 200 nm to 800 nm, and dark current of less than 1e- /pixel/sec is measured at 40°C for a 9.5 μm pixel.

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K. K. Ryu, C. W. Leitz, H. R. Clark, X. Chen, M. J. Cooper, M. Zhu, P. B. Welander, R. D. Lambert, V. Bolkhovsky, D.-R. W. Yost, B. E. Burke, J. A. Gregory, and V. Suntharalingam "Oxide-bonded molecular-beam epitaxial backside passivation process for large-format CCDs", Proc. SPIE 10699, Space Telescopes and Instrumentation 2018: Ultraviolet to Gamma Ray, 106993P (6 July 2018); https://doi.org/10.1117/12.2311512

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KEYWORDS

Semiconducting wafers

Charge-coupled devices

Hydrogen

Oxides

Silicon

Quantum efficiency

Wafer bonding

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