Gallium phosphide (GaP) is an attractive material for non-linear optics because of its broad transparency window (λ_vac > 548 nm) and large Kerr coefficient (n_2 ~ 6 × 10^-18 m^2/W). Though well-established in the semiconductor industry as a substrate for visible LEDs, its use in integrated photonics remains limited due to fabrication challenges. Recently we have developed a method to integrate high quality, epitaxially-grown GaP onto silica (SiO2) based on direct wafer bonding to an oxidized silicon carrier wafer. Here we exploit this platform to realize unprecedentedly low loss (Q > 3 × 10^5) GaP-on-SiO2 waveguide resonators which have been dispersion-engineered to support Kerr frequency comb generation in the C-band. Single-mode, grating-coupled ring resonators with radii from 10 – 100 μm are investigated. The threshold for parametric conversion is observed at input powers as little as 10 mW, followed by 0.1 – 1 THz frequency comb generation over a range exceeding 400 nm, in addition to strong second- and third-harmonic generation. Building on this advance, we discuss the prospects for low-noise, sub-mW-threshold soliton frequency combs with center frequencies tunable from the mid-IR to the near-IR. Applications of such devices range from precision molecular spectroscopy to ultrafast pulse generation to massively parallel coherent optical communication.
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