Presentation + Paper
19 March 2018 Performance validation of Mapper's FLX-1200
Marco Wieland, Guido de Boer, Pieter Brandt, Michel Dansberg, Remco Jager, Jerry Peijster, Erwin Slot, Stijn Steenbrink, Yoann Blancquaert, Stefan Landis, Laurent Pain, Jonathan Pradelles, Guido Rademaker, Isabelle Servin
Author Affiliations +
Abstract
Mapper has installed its first product, the FLX–1200, at CEA-Leti in Grenoble (France). This is a maskless lithography system, based on massively parallel electron-beam writing with high-speed optical data transport for switching the electron beams. The FLX-1200, containing 65,000 parallel electron beams in a 13mm x 2mm electron optics slit, is capable of patterning any resolution and any different type of structure all the way down to 28 nm node patterns. As of August 2017 the FLX-1200 has a fully operational electron optics column, including a 65,000 beam blanker. In this paper the latest technical achievements of the FLX-1200 have been described: beam current is at 80% of FLX-1300 target (85 minutes per wafer). For 42nm hp dense lines a CDu of 8nm 3σ and a LWR of 5nm 3σ has been demonstrated. The stitching error is 12nm μ+3σ and regarding overlay a 15nm capability demonstrated, provided matching strategy is implemented and the mirror map is calibrated.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Marco Wieland, Guido de Boer, Pieter Brandt, Michel Dansberg, Remco Jager, Jerry Peijster, Erwin Slot, Stijn Steenbrink, Yoann Blancquaert, Stefan Landis, Laurent Pain, Jonathan Pradelles, Guido Rademaker, and Isabelle Servin "Performance validation of Mapper's FLX-1200", Proc. SPIE 10584, Novel Patterning Technologies 2018, 105840G (19 March 2018); https://doi.org/10.1117/12.2300816
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Semiconducting wafers

Line width roughness

Optical alignment

Overlay metrology

Electron beam lithography

Electron beams

RELATED CONTENT


Back to Top