Improved performance of GaN micro-light-emitting diodes using AlN rod-shaped glass electrodes (Conference Presentation)

Kyung Rock Son; Sang Hoon Oh; Hyun Tae Kim; Tae Ho Lee; Byeong Ryong Lee; Tae Geun Kim

doi:10.1117/12.2285775

14 March 2018 Improved performance of GaN micro-light-emitting diodes using AlN rod-shaped glass electrodes (Conference Presentation)

Kyung Rock Son, Sang Hoon Oh, Hyun Tae Kim, Tae Ho Lee, Byeong Ryong Lee, Tae Geun Kim

Author Affiliations +

Proceedings Volume 10554, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII; 1055408 (2018) https://doi.org/10.1117/12.2285775
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

Micro-light-emitting diodes (µLEDs) have attracted much attention in recent decades on account of their diverse applications, such as light sources for transparent displays, a headlamp for automobiles, a head-up display for military and aerospace areas. However, µLEDs suffered from a trade-off between fill factor (the ratio of emission area to pixel size) and the current density because each pixel of µLEDs is screened by p-electrode for current injection, reducing the effective emission area. We can expand the emission area by reducing the p-type electrode area, but it decreases the current density of the µLED. During the past few decades, many efforts have been attempted to enhance the light output power of the µLED by changing the size and shape of the pixel. However, there have been few fundamental breakthroughs in this trade-off issue. In this study, we offered the so-called ‘glass electrodes’ to solve this problem in µLEDs. AlN rod-shaped glass electrodes with high transmittance and local current path (nanofilaments) were applied as top electrodes of the µLEDs, to improve the fill factor by enhancing the light emission of the µLED. The current path in AlN thin film was produced by an electrical breakdown process. Compared to the µLEDs with ITO electrodes, our µLEDs with AlN rod-shaped electrodes exhibited higher light output power density (105 % at 300 mA) and brighter light emission per area (110 % at 10 mA). More details including the ohmic transport mechanism for current injection and analysis of nanofilament will be presented at the conference.

Conference Presentation

Citation Download Citation

Kyung Rock Son, Sang Hoon Oh, Hyun Tae Kim, Tae Ho Lee, Byeong Ryong Lee, and Tae Geun Kim "Improved performance of GaN micro-light-emitting diodes using AlN rod-shaped glass electrodes (Conference Presentation)", Proc. SPIE 10554, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII, 1055408 (14 March 2018); https://doi.org/10.1117/12.2285775

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KEYWORDS

Electrodes

Aluminum nitride

Glasses

Diodes

Light emitting diodes

Military display technology

Gallium nitride

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