Performance of InGaAs/InP planar infrared detector with different passivation films

Honghai Deng; Haibao Shao; Bo Yang; Jing Huang; Zhiliang Wang; Xue Li; Xiumei Shao; Haimei Gong

doi:10.1117/12.2285012

24 October 2017 Performance of InGaAs/InP planar infrared detector with different passivation films

Honghai Deng, Haibao Shao, Bo Yang, Jing Huang, Zhiliang Wang, Xue Li, Xiumei Shao, Haimei Gong

Proceedings Volume 10462, AOPC 2017: Optical Sensing and Imaging Technology and Applications; 1046232 (2017) https://doi.org/10.1117/12.2285012
Event: Applied Optics and Photonics China (AOPC2017), 2017, Beijing, China

Abstract

In order to study the effect of different passivation films on the detector performance, the front-illuminated planar-type 256×1 element InGaAs/InP detectors were fabricated with SiN_x film and SiO₂ film. The SiN_x film was deposited by plasma enhanced chemical vapor deposition (PECVD) and SiO₂ film was deposited by magnetron sputtering technology. The electrical properties and photoresponse characteristics were investigated after the detector mounted on dewar. The photoresponse maps from laser beam induced current (LBIC) method show that the isolation of adjacent elements of the detector with SiN_x film is better than the detector with SiO₂ film. Furthermore, at room temperature the average density of dark current and the average peak detectivity of the two kinds of detector is 26.8 nA/cm² and 41.2 nA/cm² at 100 mV reverse bias, 1.21×10¹² cm·Hz^1/2/W and 1.08×10¹² cm·Hz^1/2/W respectively. Therefore, the detector with SiN_x film deposited by PECVD could availably passivate the surface in comparison with the detector with SiO₂ film by magnetron sputtering technology.

Citation Download Citation

Honghai Deng, Haibao Shao, Bo Yang, Jing Huang, Zhiliang Wang, Xue Li, Xiumei Shao, and Haimei Gong "Performance of InGaAs/InP planar infrared detector with different passivation films", Proc. SPIE 10462, AOPC 2017: Optical Sensing and Imaging Technology and Applications, 1046232 (24 October 2017); https://doi.org/10.1117/12.2285012

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