The Influence Of In On The Performance Of (Al)GaAs Single Quantum Well Lasers

R G Waters; C M Harding; B A Soltz; P K York; J N Baillargeon; J J Coleman; S E Fischer; D Fekete; J M Ballantyne

doi:10.1117/12.976386

22 June 1989 The Influence Of In On The Performance Of (Al)GaAs Single Quantum Well Lasers

R G Waters, C M Harding, B A Soltz, P K York, J N Baillargeon, J J Coleman, S E Fischer, D Fekete, J M Ballantyne

Proceedings Volume 1043, Laser Diode Technology and Applications; (1989) https://doi.org/10.1117/12.976386
Event: OE/LASE '89, 1989, Los Angeles, CA, United States

Abstract

Strained-layer InxGa1-x As quantum well lasers have attracted considerable attention of late due to the materials configurations made possible. Interest in the semiconductor laser community stems in part from the prospect of accessing the spectral window near 1 um for pumping new solid state hosts and in part for space communications if an advantage can be demonstrated. Technologists in these areas have fostered the hope that strain accommodation and perhaps lattice hardening 2-4 by In can enable viable long-lived devices. Steady progress in the development of high-performance Inx Ga 1-x As lasers 5-11 has been encouraging with the first cw life-test reports coming quite recently.'" Among other recent advances we cite achievement of high-power, low-threshold buried heterostructure devices operating near 1.1 We will be presenting recent progress in performance and reliability of (In)GaAs lasers of three very different types. First we will discuss devices emitting near 1 pm with demonstrated cw lifetimes exceeding 5000 hours. Next we turn our attention to two extreme cases. The first structure utilizes low levels (2.5%) of In in the quantum well of an otherwise conventional (A1)GaAs graded-index separate confinement heterostructure single quantum well (GRINSCH-SQW) laser and thus constitutes a small perturbation on a familiar device. Finally, a step-index structure with a In 0.51 Ga 0.49 As quantum well will be discussed.

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R G Waters, C M Harding, B A Soltz, P K York, J N Baillargeon, J J Coleman, S E Fischer, D Fekete, and J M Ballantyne "The Influence Of In On The Performance Of (Al)GaAs Single Quantum Well Lasers", Proc. SPIE 1043, Laser Diode Technology and Applications, (22 June 1989); https://doi.org/10.1117/12.976386

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KEYWORDS

Quantum wells

Gallium arsenide

Gallium

Semiconductor lasers

Heterojunctions

Technologies and applications

Laser applications

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