Design and performance study of a DC-DC flyback converter based on wide bandgap power devices for photovoltaic applications

Salah S. Alharbi; Saleh S. Alharbi; Ali M. S. Al-bayati; Mohammad Matin

doi:10.1117/12.2277175

23 August 2017 Design and performance study of a DC-DC flyback converter based on wide bandgap power devices for photovoltaic applications

Salah S. Alharbi, Saleh S. Alharbi, Ali M. S. Al-bayati, Mohammad Matin

Author Affiliations +

Proceedings Volume 10381, Wide Bandgap Power Devices and Applications II; 103810H (2017) https://doi.org/10.1117/12.2277175
Event: SPIE Optical Engineering + Applications, 2017, San Diego, California, United States

Abstract

This paper presents a high-performance dc–dc flyback converter design based on wide bandgap (WBG) semiconductor devices for photovoltaic (PV) applications. Two different power devices, a gallium nitride (GaN)-transistor and a silicon (Si)-MOSFET, are implemented individually in the flyback converter to examine their impact on converter performance. The total power loss of the converter with different power devices is analyzed for various switching frequencies. Converter efficiency is evaluated at different switching frequencies, input voltages, and output power levels. The results reveal that the converter with the GaN-transistor has lower total power loss and better efficiency compared to the converter with the conventional Si-MOSFET.

Citation Download Citation

Salah S. Alharbi, Saleh S. Alharbi, Ali M. S. Al-bayati, and Mohammad Matin "Design and performance study of a DC-DC flyback converter based on wide bandgap power devices for photovoltaic applications", Proc. SPIE 10381, Wide Bandgap Power Devices and Applications II, 103810H (23 August 2017); https://doi.org/10.1117/12.2277175

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KEYWORDS

Silicon carbide

Switching

Field effect transistors

Silicon

Photovoltaics

Semiconductors

Solar energy

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