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23 August 2017 Simulation and performance comparison of Si and SiC-based interleaved boost converter
Yasser Almalaq, Ayoob Alateeq, Mohammad Matin
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Proceedings Volume 10381, Wide Bandgap Power Devices and Applications II; 103810C (2017) https://doi.org/10.1117/12.2273481
Event: SPIE Optical Engineering + Applications, 2017, San Diego, California, United States
Abstract
In this paper, simulation and performance comparison of Si and SiC based interleaved boost converter is presented. Wide bandgap devices such as silicon carbide and gallium nitride are desirable and recommended in high-power applications because of their capability of operating under high temperature, high switching frequency, and high voltage with reduced switching losses. The main advantage of using SiC materials is the ability to raise the switching frequency which will reduce the size. However, their cost is high compared to Si. In this paper, 60V input voltage is used to get 120V output voltage under 100 KHz switching frequency and 0.5 duty cycle. With the help of LTSpice software, an efficiency comparison between silicon and silicon carbide by considering interleaved boost converter are simulated and studied.
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Yasser Almalaq, Ayoob Alateeq, and Mohammad Matin "Simulation and performance comparison of Si and SiC-based interleaved boost converter", Proc. SPIE 10381, Wide Bandgap Power Devices and Applications II, 103810C (23 August 2017); https://doi.org/10.1117/12.2273481
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KEYWORDS
Photovoltaics
Capacitors
Diodes
Switches
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