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23 August 2017 Defect-induced optical breakdown in aluminum nitride and gallium nitride epitaxial films
Jae-Hyuck Yoo, Andrew P. Lange, Selim Elhadj
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Proceedings Volume 10381, Wide Bandgap Power Devices and Applications II; 1038107 (2017) https://doi.org/10.1117/12.2277114
Event: SPIE Optical Engineering + Applications, 2017, San Diego, California, United States
Abstract
We are investigating conductive gallium nitride films grown on c-plane sapphire for use in a new area of application, high-power optoelectronics. It was found that optically-induced damage in gallium nitride-based transparent conductive thin films occurs at incident laser intensities significantly greater than in conventional metal-oxide based thin films. Furthermore, damage in gallium nitride epi-layers displays a unique morphology consisting of discrete, faceted pits which appear to initiate within fast-grown layers when exposed to high intensity near-infrared laser irradiation. We developed an integrated laser damage system with in-situ diagnostics to probe this damage mode and conducted damage tests of aluminum nitride and gallium nitride/aluminum nitride samples grown under various conditions. Through in-depth analyses using optical microscopy and results from high-throughput damage tests, this paper elucidates some of the prevailing damage processes and design considerations for gallium nitride transparent conductive films important for emerging high-power laser applications.
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Jae-Hyuck Yoo, Andrew P. Lange, and Selim Elhadj "Defect-induced optical breakdown in aluminum nitride and gallium nitride epitaxial films", Proc. SPIE 10381, Wide Bandgap Power Devices and Applications II, 1038107 (23 August 2017); https://doi.org/10.1117/12.2277114
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KEYWORDS
Aluminum nitride
Gallium nitride
Interfaces
Laser induced damage
Wide bandgap semiconductors
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