Paper
15 March 1989 Preparation Of Transition Metal Sulfides Using Rf Plasma
Donald M. Schleich, Robert Gieger, Richard McManus, John N. Carter
Author Affiliations +
Proceedings Volume 1037, Monitoring and Control of Plasma-Enhanced Processing of Semiconductors; (1989) https://doi.org/10.1117/12.951023
Event: SPIE Advanced Processing Technologies for Optical and Electronic Devices (colocated wth OPTCON), 1988, Santa Clara, CA, United States
Abstract
The preparation of transition metal chalcogenides using classical techniques is often confronted with serious problems. We have studied the preparation of a variety of transition metal sulfides, as thin films and bulk powders, comparing thermal and rf plasma techniques. The rf plasma approach allows us to use a simple sulfurizing agent H2S to prepare materials at low temperature. Without the aid of the rf plasma we must use either exotic sulfurizing agents or higher temperatures, which may have detrimental affects on the materials. Specifically we have studied the preparation of TiS2, MoSx and VSx. In all cases we have been able to prepare films or bulk powders at temperatures below 2500C.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Donald M. Schleich, Robert Gieger, Richard McManus, and John N. Carter "Preparation Of Transition Metal Sulfides Using Rf Plasma", Proc. SPIE 1037, Monitoring and Control of Plasma-Enhanced Processing of Semiconductors, (15 March 1989); https://doi.org/10.1117/12.951023
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KEYWORDS
Plasma

Sulfur

Metals

Thin films

Titanium

Transition metals

Molybdenum

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