Optical modulation in silicon-vanadium dioxide photonic structures

Kevin J. Miller; Kent A. Hallman; Richard F. Haglund; Sharon M. Weiss

doi:10.1117/12.2274655

24 August 2017 Optical modulation in silicon-vanadium dioxide photonic structures

Kevin J. Miller, Kent A. Hallman, Richard F. Haglund, Sharon M. Weiss

Proceedings Volume 10345, Active Photonic Platforms IX; 103451D (2017) https://doi.org/10.1117/12.2274655
Event: SPIE Nanoscience + Engineering, 2017, San Diego, California, United States

Abstract

All-optical modulators are likely to play an important role in future chip-scale information processing systems. In this work, through simulations, we investigate the potential of a recently reported vanadium dioxide (VO₂) embedded silicon waveguide structure for ultrafast all-optical signal modulation. With a VO₂ length of only 200 nm, finite-differencetime- domain simulations suggest broadband (200 nm) operation with a modulation greater than 12 dB and an insertion loss of less than 3 dB. Predicted performance metrics, including modulation speed, modulation depth, optical bandwidth, insertion loss, device footprint, and energy consumption of the proposed Si-VO₂ all-optical modulator are benchmarked against those of current state-of-the-art all-optical modulators with in-plane optical excitation.

Conference Presentation

Citation Download Citation

Kevin J. Miller, Kent A. Hallman, Richard F. Haglund, and Sharon M. Weiss "Optical modulation in silicon-vanadium dioxide photonic structures", Proc. SPIE 10345, Active Photonic Platforms IX, 103451D (24 August 2017); https://doi.org/10.1117/12.2274655

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