Quantum well intermixed tunable wavelength single stripe laser diode

Thamer Tabbakh; Patrick LiKamWa

doi:10.1117/12.2274226

24 August 2017 Quantum well intermixed tunable wavelength single stripe laser diode

Thamer Tabbakh, Patrick LiKamWa

Proceedings Volume 10345, Active Photonic Platforms IX; 1034504 (2017) https://doi.org/10.1117/12.2274226
Event: SPIE Nanoscience + Engineering, 2017, San Diego, California, United States

Abstract

A single waveguide laser with two separately addressed sections is fabricated using selective area intermixing of InGaAsP multiple quantum well grown on InP substrate. The selective intermixing of quantum wells is achieved by capping the two sections with PECVD grown silicon nitride and silicon dioxide respectively followed by rapid thermal annealing the device at 750°C for 30s prior to the fabrication of the quantum well laser. The fabricated device is capable of producing laser emission that can be tuned continuously from 1523 nm to 1556 nm by applying separate electrical currents into each 400 μm long section.

Citation Download Citation

Thamer Tabbakh and Patrick LiKamWa "Quantum well intermixed tunable wavelength single stripe laser diode", Proc. SPIE 10345, Active Photonic Platforms IX, 1034504 (24 August 2017); https://doi.org/10.1117/12.2274226

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available