Comparison of SiOxNy thin films deposited by ECR-PECVD at 2.4 and 3.0 mTorr total pressure

Jacek Wojcik

doi:10.1117/12.2283971

29 August 2017 Comparison of SiOxNy thin films deposited by ECR-PECVD at 2.4 and 3.0 mTorr total pressure

Jacek Wojcik

Proceedings Volume 10313, Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging; 103134V (2017) https://doi.org/10.1117/12.2283971
Event: Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 2002, Ottawa, Ontario, Canada

Abstract

This paper examines the influence of the total pressure and the various gas flow rates on the composition of thin silicon - oxynitride films, as expressed through their refractive indexes. These aspects are highly relevant to producing high quality and reproducible films for optoelectronic applications.

Citation Download Citation

Jacek Wojcik "Comparison of SiOxNy thin films deposited by ECR-PECVD at 2.4 and 3.0 mTorr total pressure", Proc. SPIE 10313, Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 103134V (29 August 2017); https://doi.org/10.1117/12.2283971

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