Femtosecond micromachining of glass and semiconductor materials

Michael Argument

doi:10.1117/12.2283869

29 August 2017 Femtosecond micromachining of glass and semiconductor materials

Michael Argument

Proceedings Volume 10313, Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging; 1031321 (2017) https://doi.org/10.1117/12.2283869
Event: Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 2002, Ottawa, Ontario, Canada

Abstract

Investigations are being carried out to improve the quality of laser micromachining of glass and semiconductor materials and to achieve submicron finished tolerances. Experiments have been carried out mainly with wavelengths ranging from 248 to 800 nm and pulse lengths of 130 to 400 fs. Comparisons are also being made with machining using 10 ns excimer laser pulses. Laser ablation thresholds, incubation coefficients and ablation rates are measured using single and multiple shot irradiation over a range of incident fluences with well controlled gaussian beams. New techniques for debris removal and crack minimization are being investigated. One technique for debris removal uses a sacrificial thin film of sputtered tungsten on top of the substrate before micromachining. After ablation, the tungsten film and deposited debris may be etched away with hydrogen peroxide. This technique has shown promising results in leaving a much cleaner surface. In order to reduce the amount of cracking of the substrate during laser drilling of glass, we have also been investigating the use of preheated substrates. By raising the temperature of glass before drilling, the sample is more ductile and less prone to cracking.

Citation Download Citation

Michael Argument "Femtosecond micromachining of glass and semiconductor materials", Proc. SPIE 10313, Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 1031321 (29 August 2017); https://doi.org/10.1117/12.2283869

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