Fabrication and subpicosecond photoresponse of a noval LT-GaAs photoconductive switch

X. Zheng

doi:10.1117/12.2283812

29 August 2017 Fabrication and subpicosecond photoresponse of a noval LT-GaAs photoconductive switch

X. Zheng

Proceedings Volume 10313, Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging; 103130G (2017) https://doi.org/10.1117/12.2283812
Event: Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 2002, Ottawa, Ontario, Canada

Abstract

Photoconductive devices based on various semiconductor materials such as ion-implanted InP,1' 2' ion-implanted silicon-on-sapphire,3 amorphous silicon and low-temperature-grown GaAs (LT-GaAs),`-7 as well as metal- semiconductor-metal diodess have been under investigation to generate picosecond and subpiconsecond electrical pulses for the last two decades. Those photoconductive switches, however, suffer from a difficulty to integrate them with optoelectronic circuits due to their nonstandard active materials. The hybrid integration unavoidably reduces their intrinsic multigigahertz bandwidth. We present here a new method of making a freestanding LT-GaAs photoconductive switch, which can be placed at virtually any place of the circuit containing a coplanar strip (CPS) transmission line. We also demonstrate that the freestanding LT-GaAs photoswitch exhibits a subpicosecond photoresponse time.

Citation Download Citation

X. Zheng "Fabrication and subpicosecond photoresponse of a noval LT-GaAs photoconductive switch", Proc. SPIE 10313, Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 103130G (29 August 2017); https://doi.org/10.1117/12.2283812

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