Progress in design and fabrication of resonator quantum well infrared photodetectors (R-QWIP) (Conference Presentation)

Jason N. Sun; Kwong-Kit Choi; Kimberley A. Olver; Richard X. Fu

doi:10.1117/12.2265116

16 June 2017 Progress in design and fabrication of resonator quantum well infrared photodetectors (R-QWIP) (Conference Presentation)

Jason N. Sun, Kwong-Kit Choi, Kimberley A. Olver, Richard X. Fu

Author Affiliations +

Proceedings Volume 10249, Integrated Photonics: Materials, Devices, and Applications IV; 102490K (2017) https://doi.org/10.1117/12.2265116
Event: SPIE Microtechnologies, 2017, Barcelona, Spain

Abstract

Resonator-Quantum Well Infrared Photo detectors (R-QWIPs) are the next generation of QWIP detectors that use resonances to increase the quantum efficiency (QE). Recently, we are exploring R-QWIPs for broadband long wavelength applications. To achieve the expected performance, two optimized inductively coupled plasma (ICP) etching processes (selective and non-selective) are developed. Our selective ICP etching process has a nearly infinite selectivity of etching GaAs over Ga_1-xAl_xAs. By using the etching processes, two format (1Kx1K and 40x40) detectors with 25 μm pixel pitch were fabricated successfully. In despite of a moderate doping of 0.5 × 1018 cm^-3 and a thin active layer thickness of 0.6 or 1.3 μm, we achieved a quantum efficiency 35% and 37% for 8 quantum wells and 19 quantum wells respectively. The temperature at which photocurrent equals dark current is about 66 K under F/2 optics for a cutoff wavelength up to 11 μm. The NEΔT of the FPAs is estimated to be 22 mK at 2 ms integration time and 60 K operating temperature. This good result thus exemplifies the advantages of R-QWIP.

Conference Presentation

Citation Download Citation

Jason N. Sun, Kwong-Kit Choi, Kimberley A. Olver, and Richard X. Fu "Progress in design and fabrication of resonator quantum well infrared photodetectors (R-QWIP) (Conference Presentation)", Proc. SPIE 10249, Integrated Photonics: Materials, Devices, and Applications IV, 102490K (16 June 2017); https://doi.org/10.1117/12.2265116

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KEYWORDS

Etching

Quantum well infrared photodetectors

Quantum efficiency

Sensors

Infrared sensors

Optical instrument design

Plasma etching

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