Synthesis and characterization of rare earth doped ternary chalcogenide semiconductors: effective electro-luminescence and laser materials

Arif M. Pashayev; Bahadir G. Tagiev; Oktay B. Tagiev; Ilkin T. Huseynov; Kerim R. Allahverdiyev

doi:10.1117/12.2260889

5 January 2017 Synthesis and characterization of rare earth doped ternary chalcogenide semiconductors: effective electro-luminescence and laser materials

Arif M. Pashayev, Bahadir G. Tagiev, Oktay B. Tagiev, Ilkin T. Huseynov, Kerim R. Allahverdiyev

Author Affiliations +

Proceedings Volume 10226, 19th International Conference and School on Quantum Electronics: Laser Physics and Applications; 102260J (2017) https://doi.org/10.1117/12.2260889
Event: International Conference and School on Quantum Electronics "Laser Physics and Applications" - ICSQE 2016, 2016, Sozopol, Bulgaria

Abstract

Thiogallate compounds represented by general formula MGa₂S₄ [where M- Ca⁺², Ba⁺², Sr⁺², Pb⁺², Eu⁺², Eu⁺³, (Na⁺¹La⁺³) and (Na⁺¹Ce⁺³)] are highly effective electro-luminescence and laser materials. These materials were first synthesized in 1971 and studied by many groups due to their possible applicability in opto-, and quantum- electronics. Forbidden band gap (ΔE) at room temperature (RT) for these materials varies in a wide range from ΔE ∼ eV for CaGa₂S₄ to ∼ 2.32 eV for Ca₄Ga₂S₇.

In the present paper the results of structural properties and photoluminescence (PL) measurements (temperature range of 77 – 300 K) of melt grown Ca₄Ga₂S₇ single crystals doped with 5 at% of rare earth (RE) Eu²⁺ (Ca₄Ga₂S₇ : Eu²⁺) are described for the first time. It is shown that, broadband PL with a maximum at 660 nm is caused with intra shell transitions 4f⁶5d - 4f⁷(⁸S_7/2) of Eu²⁺ ions.

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Arif M. Pashayev, Bahadir G. Tagiev, Oktay B. Tagiev, Ilkin T. Huseynov, and Kerim R. Allahverdiyev "Synthesis and characterization of rare earth doped ternary chalcogenide semiconductors: effective electro-luminescence and laser materials", Proc. SPIE 10226, 19th International Conference and School on Quantum Electronics: Laser Physics and Applications, 102260J (5 January 2017); https://doi.org/10.1117/12.2260889

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