A Repair Machine For VLSI Using Laser Induced Micro-Chemistry

G. Auvert; D. Tonneau; Y. Guern; G. Pelous

doi:10.1117/12.950101

10 April 1989 A Repair Machine For VLSI Using Laser Induced Micro-Chemistry

G. Auvert, D. Tonneau, Y. Guern, G. Pelous

Proceedings Volume 1022, Laser Assisted Processing; (1989) https://doi.org/10.1117/12.950101
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany

Abstract

Laser assisted direct writing for in situ etching and deposition may find applications in integrated circuit repair or adjustment. Recent work, performed by this team, on basic processes for deposition of metals and insulators and for etching materials currently in use in microelectronics, will be reviewed. This paper is to describe the last developments of an IC repair prototype, designed to draw 2 micron wide lines on Silicon using a focused CW Argon ion laser beam. As deposition mechanism is mainly pyrolytic, deposit shapes have been evaluated starting from experimental deposition kinetics and 3D finite element temperature distribution computation. General concepts of the machine to meet the conflicting requirements of obtaining a micron size laser spot over a full 150 mm Si wafer enclosed in a controlled atmosphere will be presented. Possible processes will be outlined and applications reviewed.

Citation Download Citation

G. Auvert, D. Tonneau, Y. Guern, and G. Pelous "A Repair Machine For VLSI Using Laser Induced Micro-Chemistry", Proc. SPIE 1022, Laser Assisted Processing, (10 April 1989); https://doi.org/10.1117/12.950101

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