A study on inductively coupled plasma etch rate of HgCdTe at cryogenic temperature

F. L. Liu; Y. Y. Chen; Z. H. Ye; R. J. Ding; L. He

doi:10.1117/12.2262537

25 May 2017 A study on inductively coupled plasma etch rate of HgCdTe at cryogenic temperature

F. L. Liu, Y. Y. Chen, Z. H. Ye, R. J. Ding, L. He

Proceedings Volume 10177, Infrared Technology and Applications XLIII; 101772H (2017) https://doi.org/10.1117/12.2262537
Event: SPIE Defense + Security, 2017, Anaheim, CA, United States

Abstract

Etching at cryogenic temperature can reduced the etch-induced damage in HgCdTe during etch process, which is important to fabricate high performance IRFPAs (Infrared Focal Plane Arrays) detectors. The etch rates of HgCdTe were examined to be similar at different temperatures and the smoothness of the etched surface improves at cryogenic temperature using a standard process, and the etch rates of different CH₄/Ar/H₂ plasmas at 123K were also investigated. Addition of H₂ increases the roughness of etched sidewall while has little effect on etched bottom surface roughness, and SiO₂ with a contact layer of ZnS functioned well as etch mask during cryoetching under CH₄/Ar/H₂ plasmas.

Citation Download Citation

F. L. Liu, Y. Y. Chen, Z. H. Ye, R. J. Ding, and L. He "A study on inductively coupled plasma etch rate of HgCdTe at cryogenic temperature", Proc. SPIE 10177, Infrared Technology and Applications XLIII, 101772H (25 May 2017); https://doi.org/10.1117/12.2262537

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