Picosecond NOR Gates Using II-VI And III-V Bulk Semiconductors

M. Pugnet; J. H. Collet

doi:10.1117/12.949958

8 March 1989 Picosecond NOR Gates Using II-VI And III-V Bulk Semiconductors

M. Pugnet, J. H. Collet

Proceedings Volume 1017, Nonlinear Optical Materials; (1989) https://doi.org/10.1117/12.949958
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany

Abstract

Picosecond NOR gates using II-VI and III-V bulk semiconductors are described, based on the induced picosecond absorption by the electron-hole plasma. The realization of cascadable devices is discussed.

Citation Download Citation

M. Pugnet and J. H. Collet "Picosecond NOR Gates Using II-VI And III-V Bulk Semiconductors", Proc. SPIE 1017, Nonlinear Optical Materials, (8 March 1989); https://doi.org/10.1117/12.949958

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