High-NA optical CD metrology on small in-cell targets enabling improved higher order dose control and process control for logic

Hugo Cramer; Elliott Mc Namara; Rik van Laarhoven; Ram Jaganatharaja; Isabel de la Fuente; Sharon Hsu; Filippo Belletti; Milos Popadic; Ward Tu; Wade Huang

doi:10.1117/12.2260268

28 March 2017 High-NA optical CD metrology on small in-cell targets enabling improved higher order dose control and process control for logic

Hugo Cramer, Elliott Mc Namara, Rik van Laarhoven, Ram Jaganatharaja, Isabel de la Fuente, Sharon Hsu, Filippo Belletti, Milos Popadic, Ward Tu, Wade Huang

Author Affiliations +

Proceedings Volume 10145, Metrology, Inspection, and Process Control for Microlithography XXXI; 101451B (2017) https://doi.org/10.1117/12.2260268
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States

Abstract

The logic manufacturing process requires small in-device metrology targets to exploit the full dose correction potential of the modern scanners and process tools. A high-NA angular resolved scatterometer (YieldStar S-1250D) was modified to demonstrate the possibility of OCD measurements on 5x5µm2 targets. The results obtained on test wafers in a logic manufacturing environment, measured after litho and after core etch, showed a good correlation to larger reference targets and AEI to ADI intra-field CDU correlation, thereby demonstrating the feasibility of OCD on such small targets. The data was used to determine a reduction potential of 55% for the intra-field CD variation, using 145 points per field on a few inner fields, and 33% of the process induced across wafer CD variation using 16 points per field full wafer. In addition, the OCD measurements reveal valuable information on wafer-to-wafer layer height variations within a lot.

Conference Presentation

Citation Download Citation

Hugo Cramer, Elliott Mc Namara, Rik van Laarhoven, Ram Jaganatharaja, Isabel de la Fuente, Sharon Hsu, Filippo Belletti, Milos Popadic, Ward Tu, and Wade Huang "High-NA optical CD metrology on small in-cell targets enabling improved higher order dose control and process control for logic", Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101451B (28 March 2017); https://doi.org/10.1117/12.2260268

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available