Technology for defectivity improvement in resist coating and developing process in EUV lithography process

Yuya Kamei; Takahiro Shiozawa; Shinichiro Kawakami; Hideo Shite; Hiroshi Ichinomiya; Masashi Enomoto; Kathleen Nafus; Marc Demand; Philippe Foubert

doi:10.1117/12.2257931

27 March 2017 Technology for defectivity improvement in resist coating and developing process in EUV lithography process

Yuya Kamei, Takahiro Shiozawa, Shinichiro Kawakami, Hideo Shite, Hiroshi Ichinomiya, Masashi Enomoto, Kathleen Nafus, Marc Demand, Philippe Foubert

Author Affiliations +

Proceedings Volume 10143, Extreme Ultraviolet (EUV) Lithography VIII; 1014326 (2017) https://doi.org/10.1117/12.2257931
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States

Abstract

Extreme ultraviolet lithography (EUVL) technology is getting closer to high volume manufacturing phase every year. In order to enhance the yield in EUV lithography process, further improvement of defectivity is required at the moment. In this paper, optimized rinse and new dispense system (NDS) have been applied to a 24nm contact hole (CH) pattern in order to achieve defect reduction. As a result, the optimized rinse reduced approximately 70 % of residue defects. In addition, NDS for coating process exhibited 80 % defect reduction in particles in the coating films of material such as SOC, SOG, and resist.

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Yuya Kamei, Takahiro Shiozawa, Shinichiro Kawakami, Hideo Shite, Hiroshi Ichinomiya, Masashi Enomoto, Kathleen Nafus, Marc Demand, and Philippe Foubert "Technology for defectivity improvement in resist coating and developing process in EUV lithography process", Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 1014326 (27 March 2017); https://doi.org/10.1117/12.2257931

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