InAs/(GaSb,AlSb) and HgTe/CdTe superlattices: detector materials with topological properties

P. C. Klipstein

doi:10.1117/12.2250130

27 January 2017 InAs/(GaSb,AlSb) and HgTe/CdTe superlattices: detector materials with topological properties

P. C. Klipstein

Proceedings Volume 10111, Quantum Sensing and Nano Electronics and Photonics XIV; 101111C (2017) https://doi.org/10.1117/12.2250130
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

Type II superlattices (T2SLs) based on alternating layers of InAs and GaSb exhibit rather unique properties, including a zero band gap at a critical value of the layer thicknesses. In this respect, T2SLs bear a close relationship to the alloy, Hg_1-xCd_xTe (“MCT”), where the band gap vanishes at a critical value of the composition parameter, x. A 15 μm pitch T2SL Long Wave Infrared array detector has recently been developed by SCD, based on a new XBp barrier architecture and a new and robust passivation process. This detector is made entirely from III-V materials and exhibits performance comparable to high quality MCT detectors. The SCD T2SL XBp detector contains both an InAs/GaSb active layer (AL) and an InAs/AlSb barrier layer. A k • p simulation method is described which can predict both the quantum efficiency and dark current with reasonable precision, from a basic definition of the superlattice period and the AL stack thickness. Results are compared with simulations for type I HgTe/CdTe superlattices. The method introduces a number of novel features including the use of an interface matrix, and a way of calculating the Luttinger parameters from standard reference values. For layer thicknesses greater than the critical values, both InAs/GaSb/AlSb and HgTe/CdTe superlattices undergo a transition to a Topological Insulator (TI) phase. The TI phase exhibits unusual spin polarized transport and optical properties which may be useful in future spintronic and THz devices.

Conference Presentation

Citation Download Citation

P. C. Klipstein "InAs/(GaSb,AlSb) and HgTe/CdTe superlattices: detector materials with topological properties", Proc. SPIE 10111, Quantum Sensing and Nano Electronics and Photonics XIV, 101111C (27 January 2017); https://doi.org/10.1117/12.2250130

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