MgZnO grown by molecular beam epitaxy on N-Type B-Ga2O3 for UV Schottky barrier solar-blind photodetectors

Mykyta Toporkov; Partha Mukhopadhyay; Haider Ali; Valeria Beletsky; Fikadu Alema; Andrei Osinsky; Winston V. Schoenfeld

doi:10.1117/12.2254937

24 February 2017 MgZnO grown by molecular beam epitaxy on N-Type β-Ga₂O₃ for UV Schottky barrier solar-blind photodetectors

Mykyta Toporkov, Partha Mukhopadhyay, Haider Ali, Valeria Beletsky, Fikadu Alema, Andrei Osinsky, Winston V. Schoenfeld

Author Affiliations +

Proceedings Volume 10105, Oxide-based Materials and Devices VIII; 101051N (2017) https://doi.org/10.1117/12.2254937
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

MgZnO is an attractive semiconductor alloy for UV optoelectronic and electronic devices. Due to recent progress and availability of high quality Ga₂O₃ substrates and its high solar-blind bandgap of ~4.9 eV, it is desirable to investigate its application for solar-blind applications as a potential substrate alternative to sapphire for MgZnO. MgZnO alloys have been grown using plasma-assisted molecular beam epitaxy on Sn doped n-type (010) β-Ga₂O₃ substrates. It was found MgZnO growth with a MgO buffer layer has a rocksalt lattice structure. In-situ RHEED observations show that the sample grown with a MgO buffer shows two-dimensional growth and a surface roughness with root-mean-square (RMS) below 2 nm. On the other hand, MgZnO grown without a MgO buffer has a mixed phase of rocksalt and wurtzite lattice structures. Additionally, as the initial step for the fabrication of tunable wavelength solar-blind photodetectors, Schottky barrier photodetectors have been fabricated, demonstrating zero (0 V) bias responsivity of 0.1 μA/W (rocksalt MgZnO), 0.7 μA/W (mixed phase MgZnO) and 1.3 μA/W (mixed phase MgZnO) at 230 nm, 310 nm and 335 nm, respectively.

Citation Download Citation

Mykyta Toporkov, Partha Mukhopadhyay, Haider Ali, Valeria Beletsky, Fikadu Alema, Andrei Osinsky, and Winston V. Schoenfeld "MgZnO grown by molecular beam epitaxy on N-Type β-Ga₂O₃ for UV Schottky barrier solar-blind photodetectors", Proc. SPIE 10105, Oxide-based Materials and Devices VIII, 101051N (24 February 2017); https://doi.org/10.1117/12.2254937

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