Paper
16 February 2017 Radiative recombination in polar, non-polar, and semi-polar III-nitride quantum wells
Andreas Hangleiter, Torsten Langer, Philipp Henning, Fedor Alexej Ketzer, Philipp Horenburg, Ernst Ronald Korn, Heiko Bremers, Uwe Rossow
Author Affiliations +
Abstract
Efficient radiative recombination is one of the key properties enabling high performance light emitting devices. We have performed an in-depth experimental analysis of radiative recombination in polar, nonpolar, and semipolar III-nitride quantum wells (QWs), which allows us to elucidate and quantify its mechanisms. We are able to distinguish between localized and free exciton recombination, we clearly see the effect of polarization fields via the quantum-confined Stark effect, and we observe the effect of the valence band structure associated with crystal orientation and strain.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andreas Hangleiter, Torsten Langer, Philipp Henning, Fedor Alexej Ketzer, Philipp Horenburg, Ernst Ronald Korn, Heiko Bremers, and Uwe Rossow "Radiative recombination in polar, non-polar, and semi-polar III-nitride quantum wells", Proc. SPIE 10104, Gallium Nitride Materials and Devices XII, 101040Q (16 February 2017); https://doi.org/10.1117/12.2252036
Lens.org Logo
CITATIONS
Cited by 3 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Quantum wells

Excitons

Polarization

Gallium nitride

Internal quantum efficiency

Oscillators

Picosecond phenomena

Back to Top