GeSn/SiGeSn photonic devices for mid-infrared applications: experiments and calculations

Genquan Han; Qingfang Zhang; Yan Liu; Chunfu Zhang; Yue Hao

doi:10.1117/12.2245980

4 November 2016 GeSn/SiGeSn photonic devices for mid-infrared applications: experiments and calculations

Genquan Han, Qingfang Zhang, Yan Liu, Chunfu Zhang, Yue Hao

Proceedings Volume 10026, Real-time Photonic Measurements, Data Management, and Processing II; 100260T (2016) https://doi.org/10.1117/12.2245980
Event: SPIE/COS Photonics Asia, 2016, Beijing, China

Abstract

In this work, a fully strained GeSn photodetector with Sn atom percent of 8% is fabricated on Ge buffer on Si(001) substrate. The wavelength λ of light signals with obvious optical response for Ge_0.92Sn_0.08 photodetector is extended to 2 μm. The impacts of compressive strain introduced during the epitaxial growth of GeSn on Ge/Si are studied by simulation. Besides, the tensile strain engineering of GeSn photonic devices is also investigated. Lattice-matched GeSn/SiGeSn double heterostructure light emitting diodes (LEDs) with Si3N4 tensile liner stressor are designed to promote the further mid-infrared applications of GeSn photonic devices. With the releasing of the residual stress in Si₃N₄ liner, a large biaxial tensile strain is induced in GeSn active layer. Under biaxial tensile strain, the spontaneous emission rate rsp and internal quantum efficiency η_IQE for GeSn/SiGeSn LED are significantly improved.

Citation Download Citation

Genquan Han, Qingfang Zhang, Yan Liu, Chunfu Zhang, and Yue Hao "GeSn/SiGeSn photonic devices for mid-infrared applications: experiments and calculations", Proc. SPIE 10026, Real-time Photonic Measurements, Data Management, and Processing II, 100260T (4 November 2016); https://doi.org/10.1117/12.2245980

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KEYWORDS

Germanium

Tin

Silicon

Light emitting diodes

Photodetectors

Photonic devices

Mid-IR

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