A 2048 X 64 Tapped Time-Delay-And Integration Charge-Coupled Image Device

Bu on Tung Nguyen; Hsin-Fu Tseng; Gene P. Weckler

doi:10.1117/12.948290

7 December 1988 A 2048 X 64 Tapped Time-Delay-And Integration Charge-Coupled Image Device

Bu on Tung Nguyen, Hsin-Fu Tseng, Gene P. Weckler

Proceedings Volume 0972, Infrared Technology XIV; (1988) https://doi.org/10.1117/12.948290
Event: 32nd Annual International Technical Symposium on Optical and Optoelectronic Applied Science and Engineering, 1988, San Diego, CA, United States

Abstract

A 2048 x 64 element time-delay-and integration (TDI) charge-coupled optical imaging device has been designed, fabri-cated, and tested. The device is a four-phase, buried-channel CCD structure and is designed for high-speed low-noise imaging (with low illumination in the visible and near-infrared spectral regions). The sensor array is divided into 16 sections of 128 x 64 pixels. Each section has two output structures, one at the top and one at the bottom of the sensor array. The device's serial-parallel-serial structure allows the charge in the parallel CCD shift register to be able to shift either up or down to the top or bottom serial CCD readout register. The readout register, in turn, transfers the charge in sequence to the output amplifier at a frequency of up to 8 Mhz. This high pixel rate combined with the parallel readout structure provides the imager with a maximum line rate of 62.5k lines per second. The high full-well capacity of each pixel (>.6 million electrons) and low noise floor of the output amplifier (<40 electrons rms) yield a dynamic range of more than 83 dB. Typical dark signal and charge-transfer-efficiency off the imager at 25°C are 2nA/cm and 0.99997, respectively. Subject terms: time-delay- and integration (TDI); charge-coupled device (CCD); visible; near-infrared; charge-transfer efficiency; full-well capacity; dynamic range.

Citation Download Citation

Bu on Tung Nguyen, Hsin-Fu Tseng, and Gene P. Weckler "A 2048 X 64 Tapped Time-Delay-And Integration Charge-Coupled Image Device", Proc. SPIE 0972, Infrared Technology XIV, (7 December 1988); https://doi.org/10.1117/12.948290

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KEYWORDS

Charge-coupled devices

Imaging systems

Electrons

Amplifiers

Clocks

Transistors

Diffusion

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