Paper
22 August 1988 Quantum Transport For Bloch Electrons In Inhomogeneous Electric Fields
Gerald J. Iafrate, Joseph B. Krieger
Author Affiliations +
Proceedings Volume 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II; (1988) https://doi.org/10.1117/12.947193
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
A novel formalism for treating Bloch electron dynamics and quantum transport in inhomogeneous electric fields of arbitrary strength and time dependence is presented. In this formalism, the electric field is described through the use of the vector potential. This choice of gauge leads to a natural set of basis functions for describing Bloch electron dynamics; in addition, a basis set of localized, electric field-dependent Wannier functions are established and utilized to derive a quantum "Boltzmann equation" which includes explicit band-mixing transients such as effective mass dressing and Zener tunneling. The applications of this formalism to quantum transport in spatially localized inhomogeneous electric fields such as occur in problems involving tunneling through "band-enginereed" tunneling barriers and impurity scattering are discussed.
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Gerald J. Iafrate and Joseph B. Krieger "Quantum Transport For Bloch Electrons In Inhomogeneous Electric Fields", Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); https://doi.org/10.1117/12.947193
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KEYWORDS
Electrons

Scattering

Semiconductors

Laser beam diagnostics

Crystals

Ultrafast lasers

Adaptive optics

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