Effect Of Developer Type And Agitation On Dissolution Of Positive Photoresist

Cynthia Zee; W. R. Bell; A. R. Neureuther

doi:10.1117/12.968314

1 January 1988 Effect Of Developer Type And Agitation On Dissolution Of Positive Photoresist

Cynthia Zee, W. R. Bell, A. R. Neureuther

Proceedings Volume 0920, Advances in Resist Technology and Processing V; (1988) https://doi.org/10.1117/12.968314
Event: Santa Clara Symposium on Microlithography, 1988, Santa Clara, CA, United States

Abstract

The role of surfactants and agitation in improving the performance of diazo type positive photoresist is explored through dissolution measurements, quantitative models for process simulation with SAM-PLE and SEM profile comparison. In-situ dissolution measurements of a commercial resist, Shipley 1400-31 in MF312, 314 and 319 developers were made on a Perkin Elmer development rate monitor (DRM) with and without moderate agitation. The quality of the measurement data was improved by using a nitride-oxide-nitride thin-film coating to reduce standing wave effects within the resist. Both developers with surfactants, MF314 and 319, show improved contrast over MF312 in plots of thickness remaining versus exposure dose. Although contrast was improved in all three cases by agitation, the effect was most pronounced with MF314. R(M) plots, obtained from combining dissolution rate data with exposure state, distinguish surface retardation effects from bulk effects and suggest that the improvement in contrast for MF314 is due to enhanced surface rate retardation. Using the rate parameters extracted from the R(M) plots, resist profiles were simulated and compared to SEM profiles of fine-lines.

Citation Download Citation

Cynthia Zee, W. R. Bell, and A. R. Neureuther "Effect Of Developer Type And Agitation On Dissolution Of Positive Photoresist", Proc. SPIE 0920, Advances in Resist Technology and Processing V, (1 January 1988); https://doi.org/10.1117/12.968314

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