Gaas-Alas Monolithic Microresonator Arrays

J L Jewell; A Scherer; S L McCall; A C Gossard; J H English

doi:10.1117/12.944060

3 May 1988 Gaas-Alas Monolithic Microresonator Arrays

J L Jewell, A Scherer, S L McCall, A C Gossard, J H English

Proceedings Volume 0881, Optical Computing and Nonlinear Materials; (1988) https://doi.org/10.1117/12.944060
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States

Abstract

Monolithic optical logic devices 1.5-5 μm across are defined by ion-beam assisted etching through a GaAs/AlAs Fabry-Perot structure grown by molecular beam epitaxy. They show reduced energy requirements (factor 30 smaller than the unetched heterostructure), uniform response over small arrays, negligible crosstalk at 3-μm center-center spacing, <200 ps recovery time and thermal stability at 82 MHz operating frequency. All experiments were performed at room temperature.

Citation Download Citation

J L Jewell, A Scherer, S L McCall, A C Gossard, and J H English "Gaas-Alas Monolithic Microresonator Arrays", Proc. SPIE 0881, Optical Computing and Nonlinear Materials, (3 May 1988); https://doi.org/10.1117/12.944060

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