Optimized Tri-Layer Resist Technique For Volume Production

E. Kawamura; J. Konno; K. Inayoshi; T. Takada

doi:10.1117/12.940357

30 June 1987 Optimized Tri-Layer Resist Technique For Volume Production

E. Kawamura, J. Konno, K. Inayoshi, T. Takada

Proceedings Volume 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI; (1987) https://doi.org/10.1117/12.940357
Event: Microlithography Conferences, 1987, Santa Clara, CA, United States

Abstract

Tri-layer resist technique has been developed for volume production of VLIs to achieve 0.8 um line and space pattern using an NA 0.35 stepper. The 0.8 um feature process was done mostly by optimizing normality of developer for top-layer resist. Obtained resolution dep ends strongly on normality of the developer. The lower normality gives much wider latitude to CD control. Possibility of application of tri-layer resist process whose struc,ture con-sists of top-layer resist, middle-layer silicon resin, and underlayer resist was examined.

Citation Download Citation

E. Kawamura, J. Konno, K. Inayoshi, and T. Takada "Optimized Tri-Layer Resist Technique For Volume Production", Proc. SPIE 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI, (30 June 1987); https://doi.org/10.1117/12.940357

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available