10 Nm Fabrication By Focused Ion Beam

Shuji Fujiwara; Masanori Komuro; Nobufumi Atoda

doi:10.1117/12.940371

30 June 1987 10 Nm Fabrication By Focused Ion Beam

Shuji Fujiwara, Masanori Komuro, Nobufumi Atoda

Proceedings Volume 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI; (1987) https://doi.org/10.1117/12.940371
Event: Microlithography Conferences, 1987, Santa Clara, CA, United States

Abstract

A novolac resin resist (ONPR-800) is exposed to 50 keV Ga focused ion beam (FIB) to create a fine line pattern by a self-development process. A dose dependence of the self-developed depth shows a rapid increase at some critical dose of about 3x10 -2 C/cm 2 . Furthermore, it is found out that the shape of the groove is considerably affected by the tensile force in the resist film. We can obtain grooves with the width of 40 nm and the aspect ratio of 40 by eliminating the stress. Gold line pattern of a 0.1 μm width is successfully produced by electroplating into the self-developed resist pattern.

Citation Download Citation

Shuji Fujiwara, Masanori Komuro, and Nobufumi Atoda "10 Nm Fabrication By Focused Ion Beam", Proc. SPIE 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI, (30 June 1987); https://doi.org/10.1117/12.940371

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