Resist Contrast Measurements Using A Development Rate Monitor

Nigel R. Farrar

doi:10.1117/12.940337

25 August 1987 Resist Contrast Measurements Using A Development Rate Monitor

Nigel R. Farrar

Proceedings Volume 0771, Advances in Resist Technology and Processing IV; (1987) https://doi.org/10.1117/12.940337
Event: Microlithography Conferences, 1987, Santa Clara, CA, United States

Abstract

The variation of energy density with depth in electron exposed resists leads to contrast measurements which can depend on film thickness and development time. In this work, two new contrast parameters are defined. One of these is independent of resist thickness and may be used to characterize resist-developer material properties. The other is thickness and process dependent but can be related to feature profile quality. A development rate monitor was used to determine these contrast parameters by simultaneously measuring the dissolution rates from areas of resist exposed at different doses. The doses were chosen to model an isolated unexposed space in the resist, the worst contrast feature in electron beam lithography.

Citation Download Citation

Nigel R. Farrar "Resist Contrast Measurements Using A Development Rate Monitor", Proc. SPIE 0771, Advances in Resist Technology and Processing IV, (25 August 1987); https://doi.org/10.1117/12.940337

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