New Pcm (HR-PCM) Technique Using Novolak-Diazide Type Photoresist As A Bottom Layer

Yoshio Yamashita; Hideyuki Jinbo; Ryuji Kawazu; Seigo Ohno; Takateru Asano; Kenji Kobayashi; Gentaro Nagamatsu

doi:10.1117/12.940334

25 August 1987 New PCM (HR-PCM) Technique Using Novolak-Diazide Type Photoresist As A Bottom Layer

Yoshio Yamashita, Hideyuki Jinbo, Ryuji Kawazu, Seigo Ohno, Takateru Asano, Kenji Kobayashi, Gentaro Nagamatsu

Proceedings Volume 0771, Advances in Resist Technology and Processing IV; (1987) https://doi.org/10.1117/12.940334
Event: Microlithography Conferences, 1987, Santa Clara, CA, United States

Abstract

A new High dry etching Resistivity Portable Conformable Masking, HR-PCM, has been developed. HR-PCM consists of a negative working resist and an image reversal resist as upper and bottom layers, respectivery. LMR-UV (Low Molecular weight Resist for UV lithography) is used as an upper layer and AZ-5214 or MP-2400A (added amine to MP-2400) as a bottom layer. As these resists are of novolak based resin, the dry etching resistivity of HR-PCM is much higher than that of conventional PCM whose bottom layer is PMMA. LMR-UV is a negative working resist and can be coated on the bottom layer and developed without damaging it because both a coating solvent and a developer are of organic solvent having small polarity such as monochlorobenzene. The latent image of the bottom layer formed by the penetrated light through the upper layer is reversed by the post exposure baking. The bottom layer under the exposed upper layer is more resistive to an alkaline. developer than the unexposed one. Therefore, HR-PCM can reliably forms double layer resist patterns. 0.55 and 0.6 μm line and space patterns are obtained on an i- and a g-line wafer steppers, respectively.

Citation Download Citation

Yoshio Yamashita, Hideyuki Jinbo, Ryuji Kawazu, Seigo Ohno, Takateru Asano, Kenji Kobayashi, and Gentaro Nagamatsu "New PCM (HR-PCM) Technique Using Novolak-Diazide Type Photoresist As A Bottom Layer", Proc. SPIE 0771, Advances in Resist Technology and Processing IV, (25 August 1987); https://doi.org/10.1117/12.940334

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