Semiconductor Diode Laser Array Modeling

D. L. Bullock; R. J. Wagner; Paul H. Corneil

doi:10.1117/12.975483

25 November 1986 Semiconductor Diode Laser Array Modeling

D. L. Bullock, R. J. Wagner, Paul H. Corneil

Proceedings Volume 0642, Modeling and Simulation of Optoelectronic Systems; (1986) https://doi.org/10.1117/12.975483
Event: 1986 Technical Symposium Southeast, 1986, Orlando, United States

Abstract

A semiconductor diode laser array model is applied to the case of the optimization of a twin channel laser (TCL) design. Results substantially in agreement with experiment are obtained as to optimum general geometry, active layer thickness, cladding layer thickness to either side of the coupled channels (wing region), and threshold current. Differential efficiency predictions are too high relative to experiment, probably due to leakage currents in the experimental device. A current-induced mode instability at high current is predicted.

Citation Download Citation

D. L. Bullock, R. J. Wagner, and Paul H. Corneil "Semiconductor Diode Laser Array Modeling", Proc. SPIE 0642, Modeling and Simulation of Optoelectronic Systems, (25 November 1986); https://doi.org/10.1117/12.975483

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