Paper
20 August 1986 Mask Specs And Equipment Specs - Disparity And Reconciliation
Paul A. Warkentin, James A. Schoeffel, Ric Diola, Gianpaolo Spadini
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Abstract
The typical pattern quality specifications for large lithography equipment (such as raster scan e-beam systems) and the industry standard pattern quality specifications for masks and reticles have grown to be quite different. The equipment manufacturers speak one language, the mask users speak another, and the mask maker must understand both. However, the relationship between these two sets of specifications is not obvious or typically available to the mask maker when purchasing such equipment, making it difficult to anticipate the mask and reticle quality it will deliver. The specific definitions and measurement procedures behind the Position Accuracy, Overlay Accuracy, Orthogonality, Scan Linearity and Linewidth Uniformity specifications for electron beam systems are examined in detail and their relationship to the Composite Overlay Errors and Composite Critical Dimension Variations found on masks and reticles is explored.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul A. Warkentin, James A. Schoeffel, Ric Diola, and Gianpaolo Spadini "Mask Specs And Equipment Specs - Disparity And Reconciliation", Proc. SPIE 0633, Optical Microlithography V, (20 August 1986); https://doi.org/10.1117/12.963714
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KEYWORDS
Photomasks

Reticles

Composites

Error analysis

Lithography

Edge roughness

Overlay metrology

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