Scanning Electron Microscope (Sem) Dimensional Measurement Tool

David P. Paul

doi:10.1117/12.963688

30 June 1986 Scanning Electron Microscope (Sem) Dimensional Measurement Tool

David P. Paul

Proceedings Volume 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V; (1986) https://doi.org/10.1117/12.963688
Event: 1986 Microlithography Conferences, 1986, Santa Clara, United States

Abstract

Requirements for measurement of very small integrated circuit (IC) device structures have become increasingly more demanding with the advent of electron beam, x-ray and advanced optical lithographic processes. High throughput, highly accurate and repeatable measurement tools are needed to guarantee dimensional control for device performance. This paper describes a dimensional measurement tool based on a Scanning Electron Microscope (SEM) which uses a fixed beam and scanning stage technique for gathering measurement data. This measurement tool is designed to make dimensional measurements of IC devices from 0.1 μm to 15 μm. Superior accuracies and precision are realized by eliminating dependence on calibration of the beam deflection as is required in digital scanning type tools. The deflection of the stage is measured by a laser interferometer which provides accurate traceability. Deflection versus secondary electron intensity profiles are gathered as scan lines. The scan lines are analyzed by the computer with an algorithm designed to detect the edges of the line according to particular sets of criteria set up uniquely for each line type. An important application of this tool is the capability to use the SEM electron beam to expose precisely spaced lines in photoresist with line widths as small as 0.1 μm and a pitch as small as 0.3 μm. These lines are excellent for use as calibration standards for other measurement operations.

Citation Download Citation

David P. Paul "Scanning Electron Microscope (Sem) Dimensional Measurement Tool", Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); https://doi.org/10.1117/12.963688

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