Registration Mark Studying For High-Overlay-Accuracy Hybrid Lithography

H. Nozue; H. Yamanaka; S. Hasegawa; Y. Iida

doi:10.1117/12.963665

30 June 1986 Registration Mark Studying For High-Overlay-Accuracy Hybrid Lithography

H. Nozue, H. Yamanaka, S. Hasegawa, Y. Iida

Proceedings Volume 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V; (1986) https://doi.org/10.1117/12.963665
Event: 1986 Microlithography Conferences, 1986, Santa Clara, United States

Abstract

Hybrid utilization of e-beam direct writing and optical reduction projection is a very effective way to adopt a high accuracy advantage in e-beam direct writing without sacrificing productivity. However, alignment marks suitable for hybrid lithography have not been extensively studied. The optical system has a certain amount of lens distortion, and it is desirable to fabricate registration marks optically. Vector-scanning e-beam is superior in writing speed and registration method flexibility to raster-scanning. The vector system uses negative resist in more exposure levels than positive resist in order to minimize the exposure area. Back-scattered electron signals and detection accuracy from optical registration marks, coated with negative resist, such as CMS, were studied experimentaly with a variable-shaped vector system. Results obtained were analyzed by comparison with Monte-Carlo simulation. Studied hybrid marks are convex and concave, tapered and non-tapered, 5pm and 10pm width marks. The experiment and simulation results indicate that the key factor in achieving high accuracy within ±0.06pm (36) was easily obtained by the optimal tapered 10μm wide mark for e-beam direct writing and optical reduction projection.

Citation Download Citation

H. Nozue, H. Yamanaka, S. Hasegawa, and Y. Iida "Registration Mark Studying For High-Overlay-Accuracy Hybrid Lithography", Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); https://doi.org/10.1117/12.963665

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