Practical Proximity Correction

Bob Carlson; Dan Burbank

doi:10.1117/12.963662

30 June 1986 Practical Proximity Correction

Bob Carlson, Dan Burbank

Proceedings Volume 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V; (1986) https://doi.org/10.1117/12.963662
Event: 1986 Microlithography Conferences, 1986, Santa Clara, United States

Abstract

The Proximity Effect which results from electron scattering can be corrected in a number of ways. The most rigorous methods use computed changes to the pattern data base and are very costly to perform on very large circuit patterns. Alternatives are presented which are more practical to implement. They are: 1) CAD corrections to the data base, 2) layout and design rules, 3) GHOSTING, 4) system set-up, 5) tri-level resist, and 6) optimum use of the resist contrast behavior.

Citation Download Citation

Bob Carlson and Dan Burbank "Practical Proximity Correction", Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); https://doi.org/10.1117/12.963662

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